major ratings and characteristics characteristics 20ETF.. units i f(av) sinusoidal waveform 20 a v rrm range 800 to 1200 v i fsm 355 a v f @ 20 a, t j = 25c 1.31 v trr @ 1a, 100a/s 95 ns t j range - 40 to 150 c to-220ac description/features the 20ETF.. fast soft recovery quiet ir rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. typical applications are both: output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted emi should be met. package outline fast soft recovery rectifier diode 1 i2127 rev. a 01/2000 quiet ir series 20ETF.. hv v f < 1.31v @ 20a i fsm = 355a v rrm 800 to 1200v
2 20ETF.. hv quiet ir series i2127 rev. a 01/2000 i f(av) max. average forward current 20 a @ t c = 97 c, 180 conduction half sine wave i fsm max. peak one cycle non-repetitive 300 10ms sine pulse, rated v rrm applied surge current 355 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 450 10ms sine pulse, rated v rrm applied 635 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 6350 a 2 s t = 0.1 to 10ms, no voltage reapplied part number v rrm , maximum v rsm , maximum non repetitive i rrm peak reverse voltage peak reverse voltage 150 c vvma 20ETF08 800 900 20ETF10 1000 1100 6 20ETF12 1200 1300 voltage ratings absolute maximum ratings electrical specifications recovery characteristics parameters 20ETF.. units conditions a a 2 s v fm max. forward voltage drop 1.31 v @ 20a, t j = 25 c r t forward slope resistance 11.88 m ? v f(to) threshold voltage 0.93 v i rm max. reverse leakage current 0.1 t j = 25 c 6t j = 150 c parameters 20ETF.. units conditions t j = 150 c v r = rated v rrm ma t rr reverse recovery time 400 ns i f @ 20apk i rr reverse recovery current 6.1 a @ 25a/ s q rr reverse recovery charge 1.7 c @ 25 c s snap factor tb/ta 0.6 typical parameters 20ETF.. units conditions ta tb trr t ifm dir dt qrr irm (rec)
3 20ETF.. hv quiet ir series i2127 rev. a 01/2000 t j max. junction temperature range - 40 to 150 c t stg max. storage temperature range - 40 to 150 c r thjc max. thermal resistance junction 0.9 c/w dc operation to case r thja max. thermal resistance junction 62 c/w to ambient r thcs typical thermal resistance, case to 0.5 c/w mounting surface , smooth and greased heatsink wt approximate weight 2 (0.07) g (oz.) t mounting torque min. 6 (5) max. 12 (10) case style to-220ac thermal-mechanical specifications parameters 20ETF.. units conditions kg-cm (ibf-in) fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics 100 110 120 130 140 150 0 5 10 15 20 25 30 60 90 120 180 maximum allowa ble case te mperature ( c) conduction angle average forward current (a) 20ETF.. series r (dc) = 0.9 k/w thjc 100 110 120 130 140 150 0 5 10 15 20 25 30 35 dc 30 60 90 120 180 maximum allowable case temperature ( c) conduction period average forward current (a) 20ETF.. series r (dc) = 0 .9 k/w th j c 0 5 10 15 20 25 30 35 0 5 10 15 20 25 rms limit 180 120 90 60 30 conduction angle average forward current (a) maximum average forward power loss (w) 20ETF.. series t = 150 c j 0 5 10 15 20 25 30 35 0 5 10 15 20 25 rm s limit 180 120 90 60 30 conduction angle average forward current (a) maximum average forward power loss (w) 20ETF.. series t = 150 c j
4 20ETF.. hv quiet ir series i2127 rev. a 01/2000 fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 7 - forward voltage drop characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 t = 25 c j instantaneous forward current (a) instantaneous forward voltage (v) t = 150 c j 20ETF.. series 50 100 150 200 250 300 350 1 10 100 number of equal amplitude half cycle current pulses (n) peak half sine wave forward current (a) initial t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 20ETF.. series at any rated load condition and with rated v applied following surge. rrm 50 100 150 200 250 300 350 400 0.01 0.1 1 pulse train duration (s) peak half sine wave forward current (a) versus pulse train duration. 20ETF.. series initial t = 150 c no voltage reapplied rated v reapplied rrm j maximum non repetitive surge current 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 50 100 150 200 rate of f all of forward current - di/dt (a/s) 1 a 5 a 10 a i = 30 a 20 a m axi mum reverse recovery t ime - t rr (s) 20ETF.. series t = 25 c j fm 0 0.3 0.6 0.9 1.2 0 50 100 150 200 rate of fall of forward current - di/dt (a/s) 1 a 5 a 10 a i = 30 a 20 a maximum reverse recovery time - trr (s) 20ETF.. series t = 150 c j fm
5 20ETF.. hv quiet ir series i2127 rev. a 01/2000 fig. 14 - thermal impedance z thjc characteristics fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 0 1 2 3 4 5 6 0 50 100 150 200 rate of fall of forward current - di/dt (a/s) 1 a 5 a 10 a i = 30 a 20 a maxim um reverse recovery charge - qrr (c) 20ETF.. series t = 25 c j fm 0 2 4 6 8 10 0 50 100 150 200 rate of fall of forward current - di/dt (a/s) 1 a 5 a 10 a i = 30 a 20 a maximum reverse recovery charge - qrr (c) 20ETF.. series t = 150 c j fm 0 5 10 15 20 25 0 50 100 150 200 maximum reverse recovery current - irr (a) rate of f all of f orward current - di/dt (a/s) 1 a 5 a 10 a i = 30 a 20 a 20ETF.. series t = 25 c j fm 0 5 10 15 20 25 30 35 0 50 100 150 200 maximum reverse recovery current - irr (a) rate of fall of forward current - di/dt (a/s) 1 a 5 a 10 a i = 30 a 20 a fm 20ETF.. series t = 150 c j 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) steady state value (dc operation) single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 transient thermal impedance z (k/w) thjc 20 et f.. se rie s
6 20ETF.. hv quiet ir series i2127 rev. a 01/2000 outline table ordering information table dimensions in millimeters and inches 20 e t f 12 device code 1 5 24 3 1 - current rating 2 - circuit configuration: e = single diode 3 - package: t = to-220ac 4 - type of silicon: f = fast diode 5 - voltage code: code x 100 = v rrm 08 = 800v 10 = 1000v 12 = 1200v 1 cathode anode 3 2 base cathode 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) max. dia. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) 1 term 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) max. 5.08 (0.20) ref. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 2 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.64 (0.10) 1 3 2.04 (0.080) max. 2
7 20ETF.. hv quiet ir series i2127 rev. a 01/2000 world headquarters: 233 kansas st., el segundo, california 90245 u.s.a tel: (310) 322-3331 fax: (310) 322-3332 european headquarters: hurst green, oxted, surrey rh8 9bb, u.k. tel: ++ 44 1883 732020 fax: ++ 44 1883 733408 ir canada: 7231 victoria park ave., suite #201, markham, ontario l3r 2z8 tel: (905) 475 1897. fax: (905) 475 8801 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 fax: ++ 49 6172 965933 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 4510111 fax: ++ 39 11 4510220 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171 tel: 81 3 3983 0086 fax: 81 3 3983 0642 ir southeast asia: 315 outram road, # 10-02 tan boon liat building, singapore 0316. tel: 65 221 8371. fax: 65 221 8372. http://www.irf.com fax-on-demand: +44 1883 733420 data and specifications subject to change wi thout notice 11/97
|
